ES1A thru es1d document number 88586 26-jul-05 vishay general semiconductor www.vishay.com 1 do-214ac (sma) surface mount ultrafast plastic rectifier major ratings and characteristics i f(av) 1.0 a v rrm 50 v to 200 v i fsm 30 a t rr 15 ns v f 0.92 v t j max. 150 c features low profile package ideal for automated placement glass passivated chip junction ultrafast recovery times for high efficiency low forward voltage, low power losses high forward surge capability meets msl level 1, per j-std-020c solder dip 260 c, 40 seconds typical applications for use in high frequency rectification and freewheel- ing application in switch ing mode converters and inverters for consumer, computer, automotive and telecommunication mechanical data case: do-214ac (sma) epoxy meets ul-94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) polarity: color band denotes cathode end maximum ratings t a = 25 c unless otherwise specified parameter symbol ES1A es1b es1c es1d unit device marking code ea eb ec ed maximum repetitive peak reverse voltage v rrm 50 100 150 200 v maximum rms voltage v rms 35 70 105 140 v maximum dc blocking voltage v dc 50 100 150 200 v maximum average forward rectified current (fig. 1) i f(av) a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 30 a operating junction and storage temperature range t j , t stg - 55 to + 150 c
www.vishay.com 2 document number 88586 26-jul-05 ES1A thru es1d vishay general semiconductor electrical characteristics t a = 25 c unless otherwise specified notes: (1) pulse test: 300 s pulse width, 1 % duty cycle thermal characteristics t a = 25 c unless otherwise specified notes: (1) units mounted on p.c.b. 5.0 x 5.0 mm (0.013 mm thick) land areas ratings and characteristics curves (t a = 25 c unless otherwise noted) parameter te s t c o n d i t i o n symbol value unit maximum instantaneous forward voltage at i f = 0.6a (1) at i f = 1.0 a v f 0.865 0.920 v maximum dc reverse current at rated dc blocking voltage t a = 25 c t a = 125 c i r 5.0 100 a maximum reverse recovery time i f = 0.5 a, i r = 1.0 a, l rr = 0.25 a t rr 15 ns maximum reverse recovery time i f = 0.6 a, v r = 30 v, di/dt = 50 a/s, i rr =10 % i rm t j = 25 c t j = 100 c t rr 25 35 ns maximum stored charge i f = 0.6 a, v r = 30 v, di/dt = 50 a/s, i rr =10 % i rm t j = 25 c t j = 100 c q rr 10 25 nc typical junction capacitance at 4.0 v, 1 mhz c j 10 pf parameter symbol ES1A es1b es1c es1d unit typical thermal resistance (1) r ja r jl 85 35 c/w figure 1. maximum forward current derating curve 0 1.2 80 90 100 110 120 130 140 150 average forward rectified current (a) lead temperature ( c) 0.8 1.0 0.2 0.4 0.6 resistive or inductive load p.c.b. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas figure 2. maximum non-repetitive peak forward surge current peak for w ard s u rge c u rrent (a) nu m b er of cycles at 60 h z 1 1 0 1 0 0 5 . 0 1 0 1 5 2 0 2 5 3 0 0 8 .3ms single half sine- w a v e
ES1A thru es1d document number 88586 26-jul-05 vishay general semiconductor www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical revers e leakage characteristics t j = 150 c t j = 125 c t j = 100 c t j = 25 c 100 10 1 0.1 0.01 instantaneo u s for w ard c u rrent (a) instantaneo u s for w ard v oltage ( v ) 0.2 0.4 0.6 0. 8 1 1.2 1.4 t j = 150 c t j = 125 c t j = 100 c t j = 25 c percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse leakage c u rrent ( a) 0204060 8 0 100 1000 100 10 1 0,1 figure 5. typical junction capacitance figure 6. typical thermal impedance t j = 25 c f = 1.0 mhz v sig = 50m v p-p re v erse v oltage ( v ) j u nction capacitance (pf) 14 12 10 8 6 4 2 0 0.1 1 10 100 mo u nted on 0.2 x 0.2? (5 x 7 mm) copper pad areas 100 10 1 0.1 1 10 100 t, p u lse d u ration (sec.) transient thermal impedance (c/ w ) 0.157 (3.99) 0.177 (4.50) 0.006 (0.152) 0.012 (0.305) 0.030 (0.76) 0.060 (1.52) 0.00 8 (0.203) 0.194 (4.93) 0.20 8 (5.2 8 ) 0.100 (2.54) 0.110 (2.79) 0.07 8 (1.9 8 ) 0.090 (2.29) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) do-214ac (sma) 0.074 max. (1. 88 max.) 0.20 8 (5.2 8 ) ref 0.066 mi n . (1.6 8 mi n .) 0.060 mi n . (1.52 mi n .) mountin g pad layout
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